Controllable p?Type Doping of 2D WSe ₂ via Vanadium Substitution

Scalable substitutional doping of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is a prerequisite to developing next-generation logic and memory devices based on 2D materials. To date, efforts are still nascent. Here, we report scalable growth vanadium (V) WSe2 at front-end-of-line (FEOL) back-end-of-line (BEOL) compatible temperatures 800 {\deg}C 400 {\deg}C, respectively. A combination experimental theoretical studies confirm that atoms substitutionally replace tungsten in WSe2, which results p-type via the introduction discrete defect levels lie close valence band maxima. The nature V dopants further verified by constructed field-effect transistors, where hole conduction becomes dominant with increasing concentration. Hence, our study presents method precisely control density intentionally introduced impurities, indispensable production electronic-grade wafer-scale extrinsic semiconductors.